• DocumentCode
    1871597
  • Title

    High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers

  • Author

    Clavelier, L. ; Damlencourt, J.F. ; Le Royer, C. ; Vincent, B. ; Morand, Y. ; Campidelli, Y. ; Hartmann, J.-M. ; Martinez, E. ; Nguyen, Q.T. ; Cristoloveanu, S. ; Deleonibus, S. ; Bensahel, D.

  • Author_Institution
    CEA LETI, Grenoble
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    In this paper, we report for the first time electrical performances of high hole mobility pMOSFETs with high-k/metal gate using ultra-thin GeOI wafers as templates obtained by the Ge condensation technique. It is concluded that the results coupled with a localized Ge condensation technique, open the way to planar SOI-nMOSFET/GeOI-pMOSFET co-integration.
  • Keywords
    MOSFET; germanium; hole mobility; silicon-on-insulator; Ge; SOI-GeOI co-integration; Si-SiO2; germanium condensation technique; high hole mobility GeOI pMOSFET; high-k/metal gate; ultra-thin germanium-on-insulator wafers; Annealing; Channel bank filters; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon germanium; Silicon on insulator technology; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357832
  • Filename
    4357832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1871597