Author :
Mears, Robert J. ; Hytha, Marek ; Dukovski, Ilija ; Yiptong, Augustin ; Huang, Xiangyang ; Halilov, Samed ; Broka, Andi ; Stephenson, Robert J. ; Rao, Vivek ; Webb, Douglas R. ; Prasad, Rajesh ; Kreps, Scott A. ; Takeuchi, Hideki ; Ikeda, Shu ; Gebara, Ga
Abstract :
In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.
Keywords :
MOS integrated circuits; carrier mobility; elemental semiconductors; semiconductor superlattices; silicon; silicon-on-insulator; MST-SOI technology; NMOS drive current enhancement; SOI; Si-SiO2; gate leakage reduction; high mobility channel replacement layer; mobility enhancement; silicon superlattice; Conference proceedings; Dielectric substrates; Doping; Effective mass; Gate leakage; Instruments; Leakage current; MOS devices; Silicon; Superlattices;
