Nd:LaF/sub 3/ waveguide laser fabricated by molecular beam epitaxy

Author

Daran, E. ; Shepherd, D.P. ; Bhutta, T. ; Lahoz, F.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

fYear

1999

fDate

28-28 May 1999

Firstpage

363

Abstract

Summary form only given. The fabrication and study of rare-earth-doped thin films is an active area of research for applications in integrated optics and novel laser sources. Here we report, for the first time, laser action in rare-earth-doped fluoride waveguides fabricated by molecular beam epitaxy (MBE). The MBE fabrication technique allows very accurate control of the thin-film growth parameters such that precise, multilayer, waveguide structures can be produced.

Keywords

lanthanum compounds; molecular beam epitaxial growth; neodymium; optical fabrication; optical multilayers; optical planar waveguides; solid lasers; waveguide lasers; LaF/sub 3/:Nd; MBE fabrication technique; Nd:LaF/sub 3/ waveguide laser fabrication; accurate control; integrated optics; laser action; molecular beam epitaxy; novel laser sources; precise multilayed waveguide structures; rare-earth-doped fluoride waveguide fabrication; rare-earth-doped thin films; thin-film growth parameters; Gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Optical waveguides; Propagation losses; Pump lasers; Transistors; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834309

Filename

834309