Current and temperature dependencies of the modal gain in wide aperture 2.3 /spl mu/m InGaAsSb/AlGaAsSb QW lasers

Author

Donetsky, D.V. ; Belenky, G.L. ; Luryi, S. ; Garbuzov, D.Z. ; Lee, Hongseok ; Martinelli, R.U. ; Connolly, J.C.

Author_Institution

State Univ. of New York, Stony Brook, NY, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

365

Lastpage

366

Abstract

Summary form only given. One of the most important physical parameters determining the basic laser output characteristics such as threshold current is the optical gain. In present work for the first time we measured the current and temperature dependencies of the modal gain in 2.3 /spl mu/m InGaAsSb/AlGaAsSb wide aperture lasers. The heterostructures were grown by molecular beam epitaxy on GaSb substrates.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 2.3 mum; GaSb substrates; InGaAsSb-AlGaAsSb; InGaAsSb/AlGaAsSb; InGaAsSb/AlGaAsSb quantum well lasers; current dependencies; heterostructures; laser output characteristics; modal gain; molecular beam epitaxy; optical gain; physical parameters; temperature dependencies; threshold current; wide aperture lasers; Apertures; Current measurement; Gain measurement; Gas lasers; Laser theory; Molecular beam epitaxial growth; Substrates; Temperature dependence; Threshold current; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834313

Filename

834313