Title :
Multi-Gate SOI MOSFET Operations in Harsh Environments
Author :
Xiong, W. ; Cleavelin, C.R. ; Hsu, C.H. ; Ma, M. ; Schulz, T. ; Schruefer, K. ; Patruno, P. ; Colinge, J.P.
Author_Institution :
SiTD, Texas Instrum. Inc., Dallas, TX
Abstract :
This paper reviews MuGFET (multi-gate MOSFET) devices performance under extreme temperature range (5-573 K) and total radiation dose up to 6 Mrad. It is concluded that MuGFET is not only a good platform for CMOS scaling, but also an excellent platform for operation in harsh environments.
Keywords :
MOSFET; gamma-ray effects; high-temperature electronics; radiation hardening (electronics); silicon-on-insulator; CMOS scaling; MuGFET devices; SiO2-Si; extreme temperature response; gamma-ray irradiation; harsh environments; multigate SOI MOSFET; radiation absorbed dose 6 Mrad; radiation dose hardening; temperature 5 K to 573 K; CMOS technology; Conference proceedings; Electrodes; Instruments; Leakage current; MOSFET circuits; Radiation hardening; Subthreshold current; Temperature distribution; USA Councils;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357837
