Title :
High-temperature continuous-wave operation of optically-pumped type-II W lasers from 3-6.3 /spl mu/m
Author :
Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Stokes, D.W. ; Olafsen, L.J. ; Aifer, E.H. ; Meyer, J.R. ; Yang, M.J. ; Shanabrook, B.V. ; Lee, H. ; Martinelli, R.U. ; Connolly, J.C. ; Sugg, A.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Summary form only given. The development of semiconductor lasers capable of emitting at wavelengths longer than 3 /spl mu/m at high CW operating temperatures has proven to be quite challenging. To our knowledge, the best result reported previously was T/sub max/=225 K for a lead-salt device (/spl lambda/=4.2 /spl mu/m). One promising approach is the W laser, named for the shape of the conduction-band profile in its four-constituent type-II active region (e.g., InAs/GaInSb/InAs/AlSb). A recent optically-pumped W structure lased CW up to T/sub max/=220 K at /spl lambda/=3.4 /spl mu/m. We report CW operation of optically-pumped W lasers nearly to room temperature. The maximum wavelength for an interband III-V device has also been extended considerably.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; optical pumping; semiconductor lasers; 220 K; 298 K; 3 to 6.3 mum; 3.4 mum; CW operating temperatures; CW operation; InAs-GaInSb-InAs-AlSb; InAs/GaInSb/InAs/AlSb; W laser; conduction-band profile; four-constituent type-II active region; high-temperature continuous-wave operation; interband III-V device; lead-salt device; maximum wavelength; optically-pumped W structure; optically-pumped type-II W lasers; room temperature; semiconductor lasers; Gas lasers; Heat pumps; Heat sinks; Optical pumping; Optical waveguides; Power generation; Pump lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834314
