The effect of H2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system

Author

Huang, Man-Chi ; Chang, Chia-Hua ; Li, Fang-Ming ; Hsu, Ching-Hsiang ; Tran, Binh-Tinh ; Tang, S.S. ; Lin, Kung-Liang ; Lin, Yueh-Chin ; Tung, Fu-Ching ; Liang, Muh-Wang ; Yi-Chang, Edward

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

19-24 June 2011

Abstract

In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature. The HIT solar cell has a very thin emitter layer on the light-incident surface (about 10nm) and the contact region was passivated by hydrogen (H2) plasma treatment to improve solar cell performance. With the passivation, the carrier transport may be enhanced and the extraction of photo current may also be increased. These features can make the Si-bulk absorbs more photons and extract more photo-electric current [1].

Keywords

elemental semiconductors; plasma CVD; semiconductor heterojunctions; silicon; solar cells; H₂ treatment; HIT solar cell perfromance; VHF-PECVD system; carrier transport; contact region; emitter layer; frequency 40.68 MHz; heterojunction-with-intrinsic thin-layer solar cell perfromance; hydrogen plasma treatment; light-incident surface; low-process temperature; photo current extraction; photoelectric current; silicon bulk; very-high-frequency chemical vapor deposition; Films; Performance evaluation; Photovoltaic cells; Plasma temperature; Sputtering; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186575

Filename

6186575