Treshold voltage modulation in FinFET devices through Arsenic Ion Implantation into TiN/HfSiON gate stack

Author

Witters, L. ; Son, N.J. ; Ferain, I. ; San, T. ; Singanamalla, R. ; Kerner, C. ; Collaert, N. ; De Meyer, K. ; Jurczak, M.

Author_Institution

lMEC, Leuven

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

31

Lastpage

32

Abstract

We have demonstrated NMOS FinFET devices with a Vt of 0.33V through As implantation into TiN. The method allows for multiple Vt FinFET devices with Vt´s of 0.33V, 0.55V (NMOS) and -0.35V (PMOS) through just one As implantation step into lOnm TiN. The NMOS Vt can be further modulated by adjusting the As implantation dose. Further optimization of the cap, implantation and annealing conditions will be needed to keep the implantation damage away from the gate dielectric.

Keywords

MOSFET; arsenic; hafnium compounds; ion implantation; silicon compounds; titanium compounds; work function; As; NMOS FinFET devices; TiN-TaN-HfSiON; arsenic ion implantation; effective workfunction; gate stack; photoresist patterning; threshold voltage modulation; voltage -0.35 V; voltage 0.33 V; voltage 0.55 V; Annealing; Degradation; Doping; FinFETs; Gate leakage; Ion implantation; MOCVD; MOS devices; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357838

Filename

4357838