Title :
Treshold voltage modulation in FinFET devices through Arsenic Ion Implantation into TiN/HfSiON gate stack
Author :
Witters, L. ; Son, N.J. ; Ferain, I. ; San, T. ; Singanamalla, R. ; Kerner, C. ; Collaert, N. ; De Meyer, K. ; Jurczak, M.
Author_Institution :
lMEC, Leuven
Abstract :
We have demonstrated NMOS FinFET devices with a Vt of 0.33V through As implantation into TiN. The method allows for multiple Vt FinFET devices with Vt´s of 0.33V, 0.55V (NMOS) and -0.35V (PMOS) through just one As implantation step into lOnm TiN. The NMOS Vt can be further modulated by adjusting the As implantation dose. Further optimization of the cap, implantation and annealing conditions will be needed to keep the implantation damage away from the gate dielectric.
Keywords :
MOSFET; arsenic; hafnium compounds; ion implantation; silicon compounds; titanium compounds; work function; As; NMOS FinFET devices; TiN-TaN-HfSiON; arsenic ion implantation; effective workfunction; gate stack; photoresist patterning; threshold voltage modulation; voltage -0.35 V; voltage 0.33 V; voltage 0.55 V; Annealing; Degradation; Doping; FinFETs; Gate leakage; Ion implantation; MOCVD; MOS devices; Tin; Voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357838
