Title :
Low threshold, room temperature superlattice-based (/spl lambda//spl sim/7.3 /spl mu/m) quantum cascade lasers by gas-source molecular beam epitaxy
Author :
Slivken, S. ; Razeghi, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
Summary form only given. In order to produce an intersubband laser emitting near 7.3 /spl mu/m, we started by modeling the active and injector regions using Schrodinger´s equation. A schematic of this Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As /spl lambda//spl sim/8 /spl mu/m superlattice-based quantum cascade laser (SLQCL) active region surrounded by two injector regions is presented. The simulation is performed assuming room temperature operation (300 K) at 45 kV/cm. The predicted emission wavelength is 7.25 /spl mu/m. A chirped superlattice is used as a basis for both active region and injector in order to take advantage of miniband transport and dispersion.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; chirp modulation; gallium arsenide; indium compounds; laser beams; optical fabrication; optical modulation; quantum well lasers; semiconductor superlattices; 300 K; 7.3 mum; 8 mum; Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As; Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As; Schrodinger´s equation; active region; active regions; chirped superlattice; emission wavelength; gas-source molecular beam epitaxy; injector regions; intersubband laser; low threshold room temperature superlattice-based laser; miniband dispersion; miniband transport; quantum cascade lasers; room temperature operation; superlattice-based quantum cascade laser active region; Gas lasers; Heat pumps; Heat sinks; Optical pumping; Optical waveguides; Power generation; Pump lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834315