Title :
High power reliable 1.9 /spl mu/m GaInAsP/InP laser diode arrays
Author :
He, X. ; Xu, D. ; Ovtchinnikov, A. ; Malarayap, F. ; Supe, R. ; Wilson, S. ; Patel, R.
Author_Institution :
Opto Power Corp., Tucson, AZ, USA
Abstract :
Summary form only given. High power monolithic laser diode arrays lasing at 1.9 /spl mu/m are important optical sources for pumping, medical uses and "eye-safe" illumination. Previously, 5.5 W CW power has been reported for a 20% fill factor 1 cm wide array on a 10/spl deg/C conductively cooled heat sink. In the paper 11 W CW power has been demonstrated for a 16% fill factor 1 cm wide array on a 10/spl deg/C conductively cooled heat sink, which is twice the level of previously reported best results. In addition, the performance data of a 2-D stack and reliability data of the arrays are reported.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; laser reliability; laser variables measurement; optical fabrication; semiconductor laser arrays; 1.9 mum; 10 C; 11 W; 2D stack; CW power; GaInAsP-InP; GaInAsP/InP laser diode arrays; conductively cooled heat sink; eye-safe illumination; fill factor; high power reliable laser diode arrays; laser diode arrays; medical uses; monolithic laser diode arrays; optical sources; performance data; pumping; reliability data; Biomedical optical imaging; Diode lasers; Heat sinks; Indium phosphide; Optical arrays; Optical pumping; Pulse measurements; Semiconductor laser arrays; Temperature; Testing;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834318
