DocumentCode
1871944
Title
Effect of proton implantation on optically excited terahertz radiation from GaAs
Author
Gong-Ru Lin ; Ci-Ling Pan
Author_Institution
Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan
fYear
1999
fDate
28-28 May 1999
Firstpage
373
Abstract
Summary form only given. Optically excited THz radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. In this work, we report the optically excited THz radiation from proton-bombarded GaAs (GaAs:H/sup +/). The different time-resolved THz fields radiating from GaAs:H/sup +/ and semi-insulating GaAs associated with their correlated mechanisms were primarily compared and elucidated.
Keywords
III-V semiconductors; gallium arsenide; ion implantation; proton effects; submillimetre wave generation; time resolved spectra; GaAs; GaAs:H; THz field reversal; correlated mechanisms; damaged semiconductors; damping oscillation; optically excited terahertz radiation; proton implantation effect; semi-insulating; surface properties; time-resolved THz fields; Gallium arsenide; Laser excitation; Optical pulse shaping; Optical pulses; Optical pumping; Optical sensors; Probes; Protons; Shape; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834324
Filename
834324
Link To Document