Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations

This work reports on the modeling of the unique subthreshold characteristics of the AM-MOSFETs and the implementation to the device to control the subthreshold characteristics and electrical stress immunity. Subthreshold characteristics degradation due to hot carrier stress can be significantly suppressed by tuning the device to the bulk current controlled device. Moreover, scalability of the accumulation-mode MOSFETs becomes comparable to inversion- and intrinsic-mode MOSFETs for ultra-thin T_SOI even for the deep sub-100 nm regime.