Title :
Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations
Author :
Kuroda, R. ; Teramoto, A. ; Cheng, W. ; Sugawa, S. ; Ohmi, T.
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ., Sendai
Abstract :
This work reports on the modeling of the unique subthreshold characteristics of the AM-MOSFETs and the implementation to the device to control the subthreshold characteristics and electrical stress immunity. Subthreshold characteristics degradation due to hot carrier stress can be significantly suppressed by tuning the device to the bulk current controlled device. Moreover, scalability of the accumulation-mode MOSFETs becomes comparable to inversion- and intrinsic-mode MOSFETs for ultra-thin TSOI even for the deep sub-100 nm regime.
Keywords :
MOSFET; accumulation layers; hot carriers; semiconductor device models; silicon-on-insulator; SOI layer thickness; SiO2-Si; accumulation-mode MOSFET; bulk current controlled device; electrical stress immunity; hot carrier stress; impurity concentration; subthreshold characteristics; Conference proceedings; Degradation; Equations; Hot carriers; Impurities; Interface states; MOSFETs; Scalability; Silicon; Stress control;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357849