Geometric Magnetoresistance and Mobility Behavior in Single-Gate and Double-Gate SOI Devices

The geometric magnetoresistance (MR) is reproduced by Monte Carlo simulations and used to accurately extract the carrier mobility. This original method allows comparing the transport mechanisms in various cases of interest: single-gate (SG) versus double-gate (DG) operation, Si-high-K versus Si-SiO₂ interfaces, in-depth inhomogeneous transport. When both front and back channels are activated, our experiments show that the mobility is overestimated by conventional extraction method, whereas MR still yields realistic values.