Title :
RF Power NLDMOS Technology Transfer Strategy from the 130nm to the 65nm node on thin SOI
Author :
Bon, O. ; Gonnard, O. ; Boissonnet, L. ; Dieudonné, F. ; Haendler, S. ; Raynaud, C. ; Morancho, F.
Abstract :
Thin film SOI is a key technology for wireless and RF applications. We demonstrate the successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on thin SOI. The process option introduced in this node enables to achieve high device performance: due to the new well patterning strategy, the main transistor figure of merit is improved.
Keywords :
nanoelectronics; power integrated circuits; radiofrequency integrated circuits; semiconductor device breakdown; silicon-on-insulator; technology transfer; DriftMOS transistor; RF power NLDMOS technology transfer strategy; off-state breakdown terms; patterning strategy; self-heating effect; size 65 nm; thermal dissipation; thin film SOI; transistor figure of merit; Breakdown voltage; CMOS technology; Doping profiles; Electric breakdown; Electric resistance; Immune system; Lithography; Radio frequency; Substrates; Technology transfer;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357852
