• DocumentCode
    1872145
  • Title

    Gate-Controlled Bipolar Action in Ultrathin-Body Dynamic-Threshold SOI MOSFET

  • Author

    Omura, Y. ; Tochio, T.

  • Author_Institution
    Fac. of Sci. & Eng., Kansai Univ., Suita
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    This paper demonstrates some interesting attributes of an ultrathin DT-MOSFET that has a confined structure; the bipolar action is suppressed or enhanced by the gate following the mechanism of Lubistor operation. It is concluded that a DT-MOSFET suitable for low-power and low-noise circuit applications can be realised.
  • Keywords
    MOSFET; silicon-on-insulator; Lubistor operation; SiO2-Si; confined device structure; gate-controlled bipolar action; low-noise circuits; low-power circuits; ultrathin-body dynamic-threshold SOI MOSFET; Conference proceedings; Electrons; Low voltage; MOSFET circuits; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357853
  • Filename
    4357853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1872145