• DocumentCode
    1872167
  • Title

    Low-Temperature Behavior Simulations of Phonon-Limited Electron Mobility for Sub-10-nm-Thick SOI MOSFET with (111) or (001) Si Surface Channel

  • Author

    Yamamura, Tsuyoshi ; Sato, Shingo ; Omura, Yasuhisa

  • Author_Institution
    Kansai Univ., Osaka
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    This paper describes the temperature behavior of the phonon-limited electron mobility on the (111) and (001) Si surfaces of DG SOI MOSFET. We discuss the major difference of the phonon-limited electron mobility behavior on the (111) and (001) Si surfaces of DG SOI MOSFET at low temperature.
  • Keywords
    MOSFET; electron mobility; silicon-on-insulator; (001) Si; (111) Si; DG SOI MOSFET; MOSFET; low-temperature behavior; phonon-limited electron mobility; silicon-on-insulator; surface channel; Acoustic scattering; Capacitive sensors; Conference proceedings; Doping; Electron mobility; Electron optics; MOSFET circuits; Optical scattering; Phonons; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357854
  • Filename
    4357854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1872167