Title :
Low temperature epitaxial growth of thin film silicon by PECVD for use in solar cell applications
Author :
Won, Dong Hyun ; Park, Min Ho ; Jang, Jin
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340°C for solar cell application. Flash lamp annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain >; 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.
Keywords :
elemental semiconductors; epitaxial growth; incoherent light annealing; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; surface treatment; PECVD; Si; crystalline silicon layer growth; crystalline volume fraction; flash lamp annealing method; low-temperature epitaxial growth; plasma-enhanced chemical vapor deposition; seed formation; solar cell applications; surface treatment; temperature 340 degC; thin film silicon; Annealing; Epitaxial growth; Photovoltaic cells; Radio frequency; Silicon; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186596
