High-Efficiency GaN Doherty Power Amplifier for 100-MHz LTE-Advanced Application Based on Modified Load Modulation Network

This paper presents a high-efficiency GaN Doherty power amplifier (PA) with 100-MHz instantaneous bandwidth for 3.5-GHz long-term-evolution (LTE)-advanced application. A modified load modulation network, employing an enlarged peaking amplifier to carrier amplifier power ratio and moderately increased load impedance of the carrier amplifier, is proposed for enhancing efficiency and achieving improved load modulation. To increase the power ratio and alleviate the influence of slight impedance mismatch, a proposed load impedance strategy and corresponding stepped-impedance matching network are adopted for high-efficiency and wideband operation. By tuning the carrier offset line, the inconsistency of efficiency, gain, and output power in the operation band can be alleviated. Measurement results show that the Doherty PA has a drain efficiency of approximately 40% with gain fluctuation less than 0.5 dB at 9-dB back-off power, and maximum efficiency of about 60% at saturation in the signal band of 3.4-3.5 GHz. By using the digital pre-distortion (DPD) technique, the Doherty PA achieves adjacent channel leakage ratio of about -48 dBc at an average output power of 40.4 dBm with efficiency of 42.5%, when driven by 100-MHz LTE-advanced signal. To the best of the authors´ knowledge, this is the first high-performance result of linearization using conventional DPD technique with 100-MHz bandwidth signals for the GaN Doherty PA at 3.5-GHz frequency band thus far.