Dual Silicide SOI CMOS Integration with Low-Resistance PtSi PMOS Contacts

Author

Zollner, Stefan ; Grudowski, Paul ; Thean, Aaron ; Jawarani, Dharmesh ; Karve, Gauri ; White, Ted ; Bolton, Scott ; Desjardins, Heather ; Chowdhury, Murshed ; Chang, Kyuhwan ; Jahanbani, Mo ; Noble, R. ; Lovejoy, L. ; Rossow, M. ; Denning, Dean ; Goedeke,

Author_Institution

Freescale Semiconductor Inc., Austin

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

75

Lastpage

76

Abstract

We demonstrate a dual silicide integration on a SOI CMOS platform with robust low-resistance PtSi PMOS contacts. Compared to NiSi, the specific contact resistivity is reduced in PtSi contacts to p-type Si and increased in contacts to n-type Si. PMOS linear and saturation drive current enhancements of 6% and 9%, respectively, were achieved with PtSi relative to baseline NiSi source/drain contacts.

Keywords

CMOS integrated circuits; electrical contacts; nickel compounds; platinum compounds; silicon-on-insulator; NiSi; PtSi; contact resistivity; dual silicide SOI CMOS integration; low-resistance PMOS contacts; saturation drive current enhancement; source-drain contacts; Annealing; CMOS process; Contact resistance; Etching; Germanium silicon alloys; MOS devices; Resistors; Schottky barriers; Silicides; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357859

Filename

4357859