A Plasma Damage Mitigation Concept for SOI Technologies: Lightning Rods

Author

Pelella, Mario M. ; Chan, Darin ; Kruegel, Stephan ; Frohberg, Kai ; Rivers, Jason ; Heller, Thomas ; Richter, Ralf ; Rodriguez, Norma ; Klein, Rich ; Zhou, J.R. ; Eppes, David ; Leary, Mike ; Hale, Stephen ; Noorlag, Date ; Bullard, Larry ; Huebler, Pete

Author_Institution

Adv. Micro Devices, Sunnyvale

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

77

Lastpage

78

Abstract

A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved product yields and also mitigates "walking- wounded" device characteristics that oftentimes plague the operation and speed grades of advanced microprocessors with threshold voltage shifts and increased leakage currents.

Keywords

integrated circuit layout; integrated circuit yield; plasma materials processing; silicon-on-insulator; SOI technologies; leakage currents; lightning rods; microprocessors; plasma charging damage; plasma damage mitigation concept; threshold voltage shifts; walking- wounded device characteristics; Capacitors; Circuits; Diodes; Electrons; Etching; Lightning; Microprocessors; Plasma applications; Plasma density; Plasma materials processing;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357860

Filename

4357860