High performance, highly reliable FD/SOI I/O MOSFETs in contemporary high-performance PD/SOI CMOS

Author

Trivedi, Vishal P. ; Winstead, B. ; Choi, P. ; Kang, L. ; Luo, T. ; Khazhinsky, M. ; Haggag, A. ; Parsons, S. ; Sanchez, H. ; Moosa, M. ; Kolagunta, V. ; Cheek, J.

Author_Institution

Freescale Semicond. Inc., Austin

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

83

Lastpage

84

Abstract

Integration of fully-depleted SOI (FD/SOI) MOSFETs for high performance 3.3 V/2.5 V I/O applications in contemporary high-performance partially-depleted SOI (PD/SOI) CMOS is reported for the first time. The FD/SOI MOSFETs feature dual etch-stop layer (dESL) stressor, optimized (minority) carrier lifetime killing implant in source/drain extension, and optimized in-situ steam generated (ISSG) gate oxidation process.

Keywords

CMOS integrated circuits; MOSFET; oxidation; silicon-on-insulator; FD/SOI I/O MOSFET; PD/SOI CMOS; dual etch-stop layer stressor; fully-depleted SOI; optimized in-situ steam generated gate oxidation; optimized minority carrier lifetime killing implant; source/drain extension; Degradation; Doping; Electric breakdown; Electrostatic discharge; Hot carriers; Implants; MOSFET circuits; Oxidation; Protection; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357863

Filename

4357863