Diode-pumped Yb/sup 3+/:Sr/sub 5/(VO/sub 4/)/sub 3/F laser

Author

Bustamante, A.N.P. ; Hammons, D.A. ; Peale, Robert E. ; Richardson, M. ; Chai, B.H.T. ; Chin, A. ; Cary, J.

Author_Institution

Center for Res. & Educ. in Opt. & Lasers, Central Florida Univ., Orlando, FL, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

393

Lastpage

394

Abstract

Summary form only given. Recent publications show high slope efficiencies, high emission cross section, and low laser threshold for Yb/sup 3+/ in appatite host structures. We have developed a Czochralski technique for producing SVAP crystalline boules with up to 6% Yb (by weight in the starting melt). Contrary to common practice in growing oxyfluoride crystals, high oxidation in the growth atmosphere produces better quality SVAP single crystals. Large crystalline boules were grown without the tendency toward grain boundaries, cracks, or spiraling, suggesting that our method can make this host market-ready. Diode-pumped operation of Yb/sup 3+/:SVAP was achieved for the first time by generating emission at 906 nm from a new high brightness InGaAs/AlGaAs laser diode which overlapped well with the broad absorption at 905 nm.

Keywords

crystal growth from melt; laser beams; optical fabrication; optical materials; optical pumping; solid lasers; strontium compounds; ytterbium; 1044 nm; 1117 nm; 905 nm; 906 nm; Czochralski technique; InGaAs-AlGaAs; Sr/sub 5/(VO/sub 4/)/sub 3/F:Yb; Yb/sup 3+/; Yb/sup 3+/:Sr/sub 5/(VO/sub 4/)/sub 3/F; appatite host structures; cracks; crystalline boules; diode-pumped laser; emission cross section; grain boundaries; growth atmosphere; laser threshold; oxyfluoride crystals; slope efficiencies; spiraling; Couplers; Diodes; Laser excitation; Microchip lasers; Optimized production technology; Power generation; Power lasers; Pump lasers; Strontium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834351

Filename

834351