• DocumentCode
    1872529
  • Title

    Stacked Nanowires ΦFET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications

  • Author

    Dupre, C. ; Ernst, T. ; Arvet, C. ; Aussenac, F. ; Deleonibus, S. ; Ghibaudo, G.

  • Author_Institution
    CEA-LETI - Minatec, Grenoble
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    Based on 3D numerical simulations and on a technological evaluation, we demonstrate the relevance of a new stacked nanowires architecture concept with independent gates, the PhiFET. We study the coupling effects in nanowires controlled by two independent gates. This architecture, proposed for low-power applications, reveals an excellent control of short-channel effects and improved ION/IOFF ratios compared to FinFET with the same designed width.
  • Keywords
    MOSFET; low-power electronics; nanoelectronics; nanowires; 3D numerical simulations; FinFET; MOSFET; independent gates; nanowires architecture; short-channel effects; stacked nanowires PhiFET; ultra-dense low-power applications; CMOS technology; Electrostatics; Equations; FinFETs; MOSFETs; Nanowires; Numerical simulation; OFETs; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357869
  • Filename
    4357869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1872529