Title :
Dependence of gate oxide dielectric breakdown on S/D RTA
Author :
Kamgar, Avid ; Vaidya, H.M. ; Baumann, F.H.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
We have studied time dependent dielectric breakdown (TDDB) of very thin gate oxides, down to 1.5 nm, and have found unusual dependence on certain processing parameters. In particular, we have found substantial reliability degradation by using S/D RTA temperatures above 1000°C.
Keywords :
CMOS integrated circuits; dielectric thin films; integrated circuit reliability; rapid thermal annealing; semiconductor device breakdown; 1.5 nm; 950 to 1100 C; CMOS process; S/D RTA temperatures; TDDB degradation; gate oxide dielectric breakdown; processing parameters; reliability degradation; source/drain RTA; thin gate oxides; time dependent dielectric breakdown; Area measurement; Breakdown voltage; Capacitance-voltage characteristics; Current measurement; Dielectric breakdown; Electric breakdown; Leakage current; Temperature; Thickness measurement; Tunneling;
Conference_Titel :
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN :
0-9638251-0-4
DOI :
10.1109/RTP.2001.1013745
