• DocumentCode
    1872835
  • Title

    Dependence of gate oxide dielectric breakdown on S/D RTA

  • Author

    Kamgar, Avid ; Vaidya, H.M. ; Baumann, F.H.

  • Author_Institution
    Agere Syst., Murray Hill, NJ, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    68
  • Lastpage
    70
  • Abstract
    We have studied time dependent dielectric breakdown (TDDB) of very thin gate oxides, down to 1.5 nm, and have found unusual dependence on certain processing parameters. In particular, we have found substantial reliability degradation by using S/D RTA temperatures above 1000°C.
  • Keywords
    CMOS integrated circuits; dielectric thin films; integrated circuit reliability; rapid thermal annealing; semiconductor device breakdown; 1.5 nm; 950 to 1100 C; CMOS process; S/D RTA temperatures; TDDB degradation; gate oxide dielectric breakdown; processing parameters; reliability degradation; source/drain RTA; thin gate oxides; time dependent dielectric breakdown; Area measurement; Breakdown voltage; Capacitance-voltage characteristics; Current measurement; Dielectric breakdown; Electric breakdown; Leakage current; Temperature; Thickness measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
  • Print_ISBN
    0-9638251-0-4
  • Type

    conf

  • DOI
    10.1109/RTP.2001.1013745
  • Filename
    1013745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1872835