Linear cellular antenna switch for highly-integrated SOI front-end

Author

McKay, Tom ; Carroll, Mike ; Costa, Julio ; Iversen, Christian ; Kerr, Dan ; Remoundos, Yiorgo

Author_Institution

RFMD Scotts Valley, Scotts Valley

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

125

Lastpage

126

Abstract

A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz. A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz.

Keywords

CMOS integrated circuits; III-V semiconductors; UHF antennas; antenna accessories; gallium arsenide; linear antennas; silicon-on-insulator; CMOS-compatible SOI SP6T cellular antenna switch; frequency 900 MHz; high-integrated SOI front-end; insertion loss; linear cellular antenna; loss 0.8 dB; loss 40 dB; noise figure 40 dB; substrate materials; CMOS technology; Conductivity; FETs; Gallium arsenide; Insertion loss; Linearity; Radio frequency; Silicon; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357884

Filename

4357884