DocumentCode
1872962
Title
Experimental Hardware Calibrated Compact Models for 50nm n-channel FinFETs
Author
Song, Jooyoung ; Bo Yu ; Xiong, W. ; Hsu, C.H. ; Cleavelin, C.R. ; Ma, M. ; Patruno, P. ; Yuan Taur
Author_Institution
Univ. of California at San Diego, La Jolla
fYear
2007
fDate
1-4 Oct. 2007
Firstpage
131
Lastpage
132
Abstract
An analytic potential DG model with quantum mechanical and short channel effects is calibrated to experimental n-channel FinFET data. All C-V and I-V curves from L=10 mum to 50 nm are in excellent agreement with a single mobility model. There is evidence suggesting higher than expected currents from very short fins possibly due to strain enhanced transport effects.
Keywords
MOSFET; calibration; carrier mobility; semiconductor device models; C-V curves; DG model; I-V curves; carrier mobility; hardware-calibrated compact models; n-channel FinFET; quantum mechanical effects; short channel effects; size 10 mum to 50 nm; strain-enhanced transport effects; Data mining; Degradation; FinFETs; Hardware; MOSFETs; Quantum capacitance; Quantum mechanics; Semiconductor device modeling; Threshold voltage; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2007 IEEE International
Conference_Location
Indian Wells, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-0879-5
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2007.4357887
Filename
4357887
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