Wide-Band Simulation and Characterization of Digital Substrate Noise in SOI Technology

Author

Bol, David ; Ambroise, R. ; Roda Neve, C. ; Raskin, Jean-Pierre ; Flandre, Denis

Author_Institution

Univ. Catholique de Louvain, Louvain-La-Neuve, Belgium

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

133

Lastpage

134

Abstract

The rising integration level of mixed-signal integrated circuits raises new issues for designers. Substrate noise generated by the switching digital part has a detrimental impact on the performance of the analog/RF parts. This contribution introduces simulation and experimental characterization of so-called "digital substrate noise" on a 0.13-μm SOI CMOS process with high resistivity (HR) substrate. To the authors knowledge, it is the first time that that it is addressed in SOI technology at circuit level.

Keywords

CMOS integrated circuits; circuit simulation; digital integrated circuits; integrated circuit noise; mixed analogue-digital integrated circuits; silicon-on-insulator; CMOS process; SOI technology; analog/RF parts; digital substrate noise; high resistivity substrate; mixed-signal integrated circuits; wide-band simulation; CMOS process; CMOS technology; Circuit simulation; Conductivity; Integrated circuit noise; Integrated circuit technology; Mixed analog digital integrated circuits; Noise generators; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Type

conf

DOI

10.1109/SOI.2007.4357888

Filename

4357888