Title :
A Quantum Definition of Threshold Voltage in MuGFETs
Author :
Se Re Na Yun ; Yu, Chong Gun ; Park, Jong Tae ; Lee, Chi-Woo ; Lederer, D. ; Afzalian, A. ; Yan, Ran ; Colinge, J.P.
Author_Institution :
Univ. of Incheon, Incheon
Abstract :
The dependence of threshold voltage on device dimensions and number of gates is analyzed. A new definition of threshold voltage, based on quantum-mechanical considerations, is proposed.
Keywords :
MOSFET; Schrodinger equation; MuGFET; Schrodinger equation; quantum-mechanical considerations; threshold voltage; Conference proceedings; Electrons; FETs; FinFETs; Radio access networks; Schrodinger equation; Shape; Silicon; Threshold voltage; USA Councils;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357890
