• DocumentCode
    1873117
  • Title

    A Ta/Mo Interdiffusion Gate Technology for Dual Metal Gate-First FinFET Fabrication

  • Author

    Matsukawa, T. ; Endo, K. ; Liu, Y.X. ; O´uchi, S. ; Ishikawa, Y. ; Yamauchi, H. ; Tsukada, J. ; Ishii, K. ; Masahara, M. ; Sakamoto, K. ; Suzuki, E.

  • Author_Institution
    AIST, Ibaraki
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    The Ta/Mo interdiffusion gate technology was introduced into the gate-first FinFET process. The Ta/Mo gated n-MOS and the Mo gated p-MOS FinFET exhibited symmetrical Vth (0.31/-0.36 V), and the scalability down to 100 nm was demonstrated.
  • Keywords
    MOSFET; chemical interdiffusion; molybdenum; semiconductor device manufacture; tantalum; Mo; Mo - Element; Ta; Ta - Element; dual metal; gate first FinFET fabrication; interdiffusion gate technology; n MOS; p MOS; scalability; Annealing; Capacitance-voltage characteristics; Degradation; Diffusion processes; Electron mobility; FETs; Fabrication; FinFETs; Scalability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357893
  • Filename
    4357893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1873117