Title :
Flexfet: Independently-Double-Gated SOI Transistor With Variable Vt and 0.5V Operation Achieving Near Ideal Subthreshold Slope
Author :
Wilson, D. ; Hayhurst, R. ; Oblea, A. ; Parke, S. ; Hackler, D.
Author_Institution :
American Semicond. Inc., Boise, ID
Abstract :
Manufacture of Flexfettrade CMOS with excellent dynamic threshold control has been demonstrated. Flexfettrade transistors operating at 0.5 V in DG mode have demonstrated a near ideal subthreshold slope of 64 mV/decade and an Ion/Ioff ratio of 106. In IDG mode, the Flexfettrade bottom gate provides a wide range of dynamic Vt adjustment enabling flexible device configurability for future ultra-low-power designs.
Keywords :
CMOS integrated circuits; MOSFET; junction gate field effect transistors; low-power electronics; silicon-on-insulator; Flexfet; IDG MOSFET; JFET; SiO2-Si; SiO2-Si - Interface; damascene metal top gate; dynamic threshold control; independently-double-gated SOI transistor; subthreshold slope; ultra-low-power designs; voltage 0.5 V; CMOS logic circuits; CMOS technology; Conference proceedings; Electrodes; Etching; Implants; MOSFET circuits; Oxidation; Tin; Voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357895
