Title :
Athermal annealing of ion-implanted silicon
Author :
Donnelly, D.W. ; Covington, B.C. ; Grun, J. ; Fischer, R.P. ; Peckerar, M. ; Felix, C.L. ; Djordjevic, B. Boro ; Mignogna, R. ; Meyer, J.R. ; Ting, A. ; Manka, C.K.
Author_Institution :
Southwest Texas State Univ., San Marcos, TX, USA
Abstract :
Phosphorus, arsenic, and boron dopants in neutron-transmutation-doped and ion-implanted silicon were electrically activated by a technique that does not involve the direct application of heat as in conventional thermal annealing or pulsed laser annealing. Dopants activated by this method exhibit much less diffusion than donors activated by standard thermal methods.
Keywords :
annealing; arsenic; boron; diffusion; elemental semiconductors; ion implantation; neutron effects; phosphorus; semiconductor doping; silicon; Si:As; Si:B; Si:P; athermal annealing; dopant diffusion; electrical activation; ion implanted silicon; neutron transmutation doped silicon; Annealing; Boron; Conductivity; Infrared spectra; Optical pulses; Plasma applications; Plasma sources; Plasma temperature; Resistance heating; Silicon;
Conference_Titel :
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN :
0-9638251-0-4
DOI :
10.1109/RTP.2001.1013757
