Title :
Operation of a Work Function Type SOI Temperature Sensor up to 250°C
Author :
Sakurano, K. ; Katoh, H. ; Chun, Y.J. ; Watanabe, H.
Author_Institution :
Ricoh Co. Ltd., Osaka
Abstract :
Bulk-Si ICs cannot operate over 150degC, due to the reverse bias leakage current of the p-n junction in MOSFETs or diode components. In this paper, we investigated a work function type temperature sensor on a SOI substrate, which generates voltage output by the work function difference and is superior to diode-type temperature sensors at high temperature. This SOI temperature sensor is operated up to 250degC, and the consumption current is one order of magnitude lower than that of a bulk-Si temperature sensor.
Keywords :
MOSFET; integrated circuits; leakage currents; silicon; silicon-on-insulator; temperature sensors; Bulk-Si ICs; MOSFET; SOI temperature sensor; Si; Si - Element; diode components; diode-type temperature sensors; reverse bias leakage current; temperature 150 C; temperature 150 degC; temperature 250 degC; work function type temperature sensor; Circuits; Diodes; FETs; Leakage current; MOS devices; P-n junctions; Temperature control; Temperature dependence; Temperature sensors; Voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357896
