Triode emitters with well-structure cathode

Author

Bae, Sungil ; Park, Kyung Ho ; Lee, Soonil ; Koh, Ken Ha

Author_Institution

Dept. of Molecular Sci. & Technol., Ajou Univ., Suwon, South Korea

fYear

2004

fDate

11-16 July 2004

Firstpage

26

Lastpage

27

Abstract

The suppression of gate current was realized by introducing an extra conducting layer between gate-insulators and cathode layers. A new type of triode emitters were fabricated, in which carbon emitter layers were positioned at the central part of the well bottom formed in silicon well structures. The silicon well structure was formed using reactive ion etching (RIE). Because of the favorable field distribution using heavily doped η-type silicon, we were able to suppress the gate current almost completely.

Keywords

carbon; cathodes; elemental semiconductors; silicon; sputter etching; triodes; C; Si; carbon emitter layers; cathode layers; conducting layer; field distribution; gate current suppression; gate-insulators; heavily doped η-type silicon; reactive ion etching; silicon well structures; triode emitters fabrication; well-structure cathode; Anodes; Carbon dioxide; Cathodes; Fabrication; Lithography; Resists; Silicon; Sputter etching; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354881

Filename

1354881