Title :
A Very Sensitive Pressure Sensor on a SOI-on-Cavity Substrate
Author :
Wu, A.M. ; Chen, J. ; Wang, X.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
A new structure combining a beam-diaphragm structure and a SOI-on-cavity substrate was proposed in this paper. Both high sensitivity and good linearity could be achieved due to the stress concentrated structure.
Keywords :
diaphragms; pressure sensors; silicon-on-insulator; SOI-on-cavity substrate; Si; Si - Surface; beam-diaphragm structure; linearity characteristics; pressure sensor; sensor sensitivity; stress concentrated structure; Actuators; Conference proceedings; Dielectric devices; Fabrication; Information technology; Linearity; Piezoresistive devices; Resistors; Silicon; Stress;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357897
