Title :
Effects of wafer emissivity on lightpipe radiometry in RTP tools
Author :
Kreider, K.G. ; Allen, D.W. ; Chen, D.H. ; DeWitt, D.P. ; Meyer, C.W. ; Tsai, B.K.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We investigated the effect of different silicon wafer emissivities and the effect of low emissivity films on rapid thermal processing (RTP) wafer temperature measurements using lightpipe radiation thermometers (LPRTs). These tests were performed in the NIST RTP test bed. We used a NIST thin-film. thermocouple (TFTC) calibration wafer to calibrate the LPRTs in situ. The measurement; of LPRTs viewing Au and Pt thin-film spots in the center of the wafer were compared to LPRT radiance temperature readings that viewed bare Si/SiO2. We found differences of up to 36°C at 900°C in the LPRT measurements due to the low emissivity films. A model of the wafer temperature measurement is presented to provide an insight into the effects of wafer emissivity on LPRT measurements in RTP tools.
Keywords :
calibration; emissivity; integrated circuit measurement; optical sensors; radiometry; rapid thermal processing; spectral methods of temperature measurement; thermocouples; 900 degC; Au; Au thin-film spots; NIST RTP test bed; NIST thin-film. thermocouple calibration wafer; Pt; Pt thin-film spots; RTP tools; RTP wafer temperature measurements; Si-SiO2; bare Si/SiO2; lightpipe radiation thermometers; lightpipe radiometry; low emissivity films; radiance temperature readings; silicon wafer emissivities; wafer emissivity effects; wafer temperature measurement model; Calibration; NIST; Performance evaluation; Radiometry; Rapid thermal processing; Semiconductor films; Silicon; Temperature measurement; Testing; Transistors;
Conference_Titel :
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN :
0-9638251-0-4
DOI :
10.1109/RTP.2001.1013761
