Rapid thermal activation and diffusion of boron and phosphorus implants

Author

Fiory, A.T. ; Chawda, S.G. ; Madishetty, S. ; Mehta, V.R. ; Ravindra, N.M. ; McCoy, S.P. ; Lefrançois, M.E. ; Bourdelle, K.K. ; McKinley, J.M. ; Gossmann, H.-J.L. ; Agarwal, A.

Author_Institution

Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA

fYear

2001

fDate

2001

Firstpage

227

Lastpage

231

Abstract

Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.

Keywords

Hall effect; boron; diffusion; elemental semiconductors; ion implantation; leakage currents; phosphorus; rapid thermal processing; secondary ion mass spectroscopy; silicon; Hall coefficient; Si:B; Si:P; diffusion depths; low energy ion implantation; rapid thermal activation; rapid thermal annealing; rapid thermal diffusion; reverse bias diode leakage; secondary ion mass spectroscopy; sheet resistance; spike annealing; transient enhanced diffusion; Boron; Crystallization; Implants; Ion implantation; Lamps; Physics; Rapid thermal annealing; Silicon; Tail; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001

Print_ISBN

0-9638251-0-4

Type

conf

DOI

10.1109/RTP.2001.1013770

Filename

1013770