Title :
Comparative study on implant anneal using single wafer furnace and lamp-based rapid thermal processor
Author :
Yoo, Woo Sik ; Fukada, Takashi ; Setokubo, Tsuyoshi ; Aizawa, Kazuo ; Ohsawa, Toshinori ; Takahashi, Nobuaki ; Komatubara, Ryuichi
Author_Institution :
WaferMasters Inc., San Jose, CA, USA
Abstract :
Comparative stud on rapid thermal annealing (RTA) of various implant species (11B+, 49BF2+, 31P+ and 75As+) in 200mm diameter Si wafers was done using a single wafer furnace (SWF) system and a lamp-based RTP system under 1 atm N2 atmosphere. Average sheet resistance and its uniformity were measured after annealing under various conditions. Production worthy process windows for SWF and lamp-based conventional RTA systems are also compared. Lower average sheet resistance and superior sheet resistance uniformity were achieved in wide process conditions using SWF system. Effect of annealing on dopant redistribution was investigated using secondary ion mass spectroscopy (SIMS). The validity of "spike anneal" was discussed based on electrical activation and dopant diffusion mechanisms in implanted Si wafers.
Keywords :
diffusion; doping profiles; elemental semiconductors; furnaces; rapid thermal annealing; secondary ion mass spectroscopy; silicon; 1 atm; Si:As; Si:B; Si:BF2; Si:P; average sheet resistance; dopant diffusion mechanisms; dopant redistribution; electrical activation; implant anneal; lamp-based rapid thermal processor; process conditions; production worthy process windows; rapid thermal annealing; secondary ion mass spectroscopy; single wafer furnace; spike anneal; Atmosphere; Atmospheric measurements; Electric resistance; Electrical resistance measurement; Furnaces; Implants; Mass spectroscopy; Production systems; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN :
0-9638251-0-4
DOI :
10.1109/RTP.2001.1013772
