Saturable absorber modelocking using non-epitaxially grown semiconductor-doped films

Summary form only given. We demonstrate novel, non-epitaxially grown semiconductor saturable absorber devices for laser modelocking. These devices consist of semiconductor nanocrystallites doped into silica films using RF sputtering. These films can be deposited on virtually any substrate, including oxides such as glass and dielectric coatings as well as metal mirrors. By varying the doping density of the semiconductor quantum dots, one can adjust the absorption coefficient of the device. A wide range of semiconductor materials can be doped into the silica films. Therefore, appropriate choice of the semiconductor and knowledge of quantum confinement effects allow one to control the operating wavelength and absorption edge of the device.