Modeling and analysis of closed-loop gate drive

Author

Chen, Lihua ; Ge, Baoming ; Peng, Fang Z.

Author_Institution

Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA

fYear

2010

fDate

21-25 Feb. 2010

Firstpage

1124

Lastpage

1130

Abstract

In this work, the closed-loop gate drive is modeled and mathematically analyzed. The simulated results show good agreement with experimental results. The reported analysis method and tool can provide guidelines for the closed-loop gate drive design in real applications. This work proposed a new mathematical method for IGBT switching transient behaviors modeling and gate drive control analysis. In the proposed method, equivalent circuits are developed according different power device operating conditions and circuit behaviors are mathematically described with state equations.

Keywords

equivalent circuits; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; IGBT; closed-loop gate drive; equivalent circuits; gate drive control analysis; switching transient; Amplitude modulation; Circuit simulation; Circuit testing; Drives; Equations; Equivalent circuits; Insulated gate bipolar transistors; Mathematical model; Operational amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE

Conference_Location

Palm Springs, CA

ISSN

1048-2334

Print_ISBN

978-1-4244-4782-4

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2010.5433360

Filename

5433360