DocumentCode :
1874148
Title :
Switching loss analysis of closed-loop gate drive
Author :
Chen, Lihua ; Peng, Fang Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
fYear :
2010
fDate :
21-25 Feb. 2010
Firstpage :
1119
Lastpage :
1123
Abstract :
In this work, the IGBT turn-on and turn-off waveforms are normalized in order to analyze the closed-loop gate drive switching losses. The relationships of energy losses and controlled switching speed, voltage overshoot, current overshoot are derived. Theoretical analysis results show good agreement with experimental results. The proposed analysis methodology and results can provide guidelines for the gate drive design in real applications.
Keywords :
driver circuits; insulated gate bipolar transistors; switching convertors; closed-loop gate drive; current overshoot; insulated gate bipolar transistors; switching loss analysis; switching speed; voltage overshoot; Breakdown voltage; Circuit testing; Control systems; Drives; Energy loss; Guidelines; Insulated gate bipolar transistors; Power semiconductor switches; Switching loss; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
ISSN :
1048-2334
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
Type :
conf
DOI :
10.1109/APEC.2010.5433363
Filename :
5433363
Link To Document :
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