Title :
Carbon nanotubes field emitter and back-gated structure
Author :
Zhu, M.Y. ; Wang, J.J. ; Outlaw, R. ; Zhao, X. ; Hollowa, B.C. ; Manos, D.M. ; Mammana, V. ; Ray, M. ; Shenderova, O.
Author_Institution :
Dept. of Phys., Coll. of William & Mary, Williamsburg, VA, USA
Abstract :
Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.
Keywords :
carbon nanotubes; catalysts; electron field emission; nanolithography; nanotube devices; nickel; plasma CVD; triodes; C-Ni-Si; PECVD; Si; back-gated structure; carbon nanotubes field emitter; catalyst; field emission device design; nanoscaled nickel particles; nanosphere lithography; radio frequency plasma enhanced chemical vapor deposition; silicon substrates; triode I-V curve measurement; triode structure; Carbon nanotubes; Chemical vapor deposition; Lithography; Nickel; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma measurements; Radio frequency; Silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354917
