• DocumentCode
    1874269
  • Title

    Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 nm and 1047 nm

  • Author

    Heller, Johann ; Bartha, J.W.

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    450
  • Lastpage
    451
  • Abstract
    Summary form only given. The reflectivity change of materials due to phase changes or relatively large changes in temperature have been studied extensively in the literature. In such cases, the reflectivity variations are typically over 1%, which can be easily measured, and can actually be used for remote temperature sensing. Here, we show that such small reflectivity changes can be measured at high speed and over a temperature range of room temperature to about 200 degrees C, which corresponds to many industrial processes involving the thermal treatment of thin organic films.
  • Keywords
    calibration; optical films; optical sensors; reflectivity; remote sensing; silicon; spectral methods of temperature measurement; 1047 nm; 20 to 200 C; 633 nm; Si; high speed; industrial processes; phase changes; reflectivity; reflectivity change; reflectivity variations; remote temperature sensing; silicon; small reflectivity changes; surface oxide; temperature dependence; temperature range; thermal treatment; thin organic films; Chemical technology; Probes; Reflectivity; Silicon; Spectroscopy; Surface waves; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.834432
  • Filename
    834432