DocumentCode :
1874269
Title :
Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 nm and 1047 nm
Author :
Heller, Johann ; Bartha, J.W.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fYear :
1999
fDate :
28-28 May 1999
Firstpage :
450
Lastpage :
451
Abstract :
Summary form only given. The reflectivity change of materials due to phase changes or relatively large changes in temperature have been studied extensively in the literature. In such cases, the reflectivity variations are typically over 1%, which can be easily measured, and can actually be used for remote temperature sensing. Here, we show that such small reflectivity changes can be measured at high speed and over a temperature range of room temperature to about 200 degrees C, which corresponds to many industrial processes involving the thermal treatment of thin organic films.
Keywords :
calibration; optical films; optical sensors; reflectivity; remote sensing; silicon; spectral methods of temperature measurement; 1047 nm; 20 to 200 C; 633 nm; Si; high speed; industrial processes; phase changes; reflectivity; reflectivity change; reflectivity variations; remote temperature sensing; silicon; small reflectivity changes; surface oxide; temperature dependence; temperature range; thermal treatment; thin organic films; Chemical technology; Probes; Reflectivity; Silicon; Spectroscopy; Surface waves; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
Type :
conf
DOI :
10.1109/CLEO.1999.834432
Filename :
834432
Link To Document :
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