DocumentCode :
1874308
Title :
Field emission of nanostructured boron nitride thin films in the presence of residual gases
Author :
Encarnacio, P.A. ; Goldberg, Hannah R. ; Deline, Christopher A. ; Gilchrist, Brain E. ; Van Noord, Jonathan L. ; Clarke, Roy
Author_Institution :
Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
108
Lastpage :
109
Abstract :
In this paper, field emission was measured in varying atmospheres of different gases, from an on-going study of thin films of polycrystalline boron nitride (BN). The initial results indicate that the nanostructured BN surface exhibit robust emission characteristics in the presence of residual gases such as oxygen, xenon, water vapor, and nitrogen. Also, no permanent effect on the emission characteristics was observed from the exposure of the films to the gas.
Keywords :
boron compounds; field emission; nanostructured materials; semiconductor thin films; wide band gap semiconductors; BN; field emission; nanostructured boron nitride thin films; nitrogen; oxygen; polycrystalline boron nitride; residual gases; water vapor; xenon; Application software; Atomic force microscopy; Boron; Gases; Nanostructured materials; Nanostructures; Scanning electron microscopy; Sputtering; Surface morphology; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354923
Filename :
1354923
Link To Document :
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