DocumentCode
1874320
Title
Field electron emission through and from two-dimensional electron gas
Author
Filip, V. ; Nicolaescu, D. ; Wong, H. ; Nagao, M. ; Chu, P.L.
Author_Institution
Dept. of Electron. Eng. & Optoelectron. Res. Centre, Hong Kong Univ., Kowloon Tong, China
fYear
2004
fDate
11-16 July 2004
Firstpage
110
Lastpage
111
Abstract
In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.
Keywords
bound states; electron field emission; two-dimensional electron gas; field electron emission; field emission current; quasibound states; semiconductor interface layer electrons; semiconductor interfaces; two-dimensional electron gas; vacuum interfaces; Coatings; Electron emission; Electron sources; Iron; Optical devices; Optical filters; Potential energy; Quantization; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1354924
Filename
1354924
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