12 GHz GaAs J-FET 256/258 dual-modulus prescaler IC

Author

Wada, M. ; Kawasaki, H. ; Hida, Y. ; Okubora, A. ; Kasahara, J.

Author_Institution

Sony Corp. Res. Center, Yokohama, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

109

Lastpage

112

Abstract

A divide-by 256/258 dual-modulus prescaler IC has been successfully fabricated using GaAs JFETs with a gate length of 0.5 mu m. The prescaler IC consists of nine flip-flops, two NOR gates, three OR gates, and three I/O buffers. These circuits were constructed using a three-level SCFL (source coupled FET logic) gate. A maximum operating frequency of 12 GHz was obtained with a power consumption of 2.2 W, including power for buffer circuits, which is the highest frequency for a dual-modulus prescaler IC to date.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; junction gate field effect transistors; scaling circuits; 0.5 micron; 12 GHz; 2.2 W; GaAs; I/O buffers; JFETs; NOR gates; OR gates; divide-by 256/258; dual-modulus prescaler IC; flip-flops; maximum operating frequency; power consumption; source coupled FET logic; three-level SCFL; Coupling circuits; Energy consumption; FETs; Flip-flops; Frequency; Gallium arsenide; JFETs; Logic circuits; Logic gates; Phase locked loops;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69305

Filename

69305