High Q on-chip passive components for UTSi(R) CMOS technology

Author

Megahed, M. ; Benton, R. ; Stuber, M. ; Lo, L. ; Burgener, M. ; Xiaolan Wu ; Canyon, J.

Author_Institution

Peregrine Semicond. Corp., San Diego, CA, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

793

Abstract

UTSi (Ultra-Thin Silicon) on insulator technology shows the promise of full integration of digital, analog, RF, and RF matching circuitry on a single chip. It is based on standard VLSI technology. The process features excellent isolation due to the dielectric substrate, high RF performance transistors, and high quality passive elements. This paper presents the performance of the UTSi passive elements. Measurement data for resistors and capacitors are reported, as well as inductors with high Q.

Keywords

CMOS integrated circuits; MOS capacitors; Q-factor; UHF integrated circuits; VLSI; inductors; integrated circuit technology; mixed analogue-digital integrated circuits; resistors; silicon-on-insulator; Si; UTSi CMOS technology; UTSi passive elements; capacitors; dielectric substrate; high Q on-chip passive components; inductors; resistors; standard VLSI technology; ultra-thin SOI technology; CMOS technology; Circuits; Dielectric measurements; Dielectric substrates; Dielectrics and electrical insulation; Isolation technology; Q measurement; Radio frequency; Silicon on insulator technology; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705109

Filename

705109