Title :
Electron field emission property of boron doping nano-crystalline diamond
Author :
Lee, Y.C. ; Lin, S.J. ; Huang, J.H. ; Chia, C.T. ; Lin, I.N.
Author_Institution :
Dept. of Mater Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The effects of boron doping on the nucleation behavior and the characteristics of nano-crystalline diamond (NCD) films were investigated. NCD films were prepared by microwave plasma enhanced chemical vapor deposition and were grown on mirror-polished p-type Si(100) substrate by bias enhanced growth technique. The morphologies and bonding structures of the films were characterized by field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray diffraction. The increase in proportion of sp2-bonded grain boundaries in finer grain NCD films is assumed to be the main modifying factor in the electron field emission of the film.
Keywords :
Raman spectra; X-ray diffraction; atomic force microscopy; bonds (chemical); boron; crystal binding; crystal morphology; diamond; doping; electron field emission; grain boundaries; nanostructured materials; nucleation; plasma CVD; scanning electron microscopy; thin films; C:B; Raman spectroscopy; Si; X-ray diffraction; atomic force microscopy; bias enhanced growth technique; boron doping nanocrystalline diamond; electron field emission; field emission scanning electron microscopy; film bonding structures; film morphology; microwave plasma enhanced chemical vapor deposition; mirror-polished p-type Si (100) substrate; nucleation; sp2-bonded grain boundaries; Atomic force microscopy; Boron; Chemical vapor deposition; Doping; Electron emission; Microwave theory and techniques; Plasma chemistry; Plasma properties; Plasma x-ray sources; Scanning electron microscopy;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354932
