DocumentCode :
1874559
Title :
Exploring the Q-factor limit of temperature compensated CMOS-MEMS resonators
Author :
Ming-Huang Li ; Cheng-Syun Li ; Sheng-Shian Li
Author_Institution :
Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
18-22 Jan. 2015
Firstpage :
853
Lastpage :
856
Abstract :
This work presents a study on the quality factor (Q-factor) of the passively temperature compensated CMOS-MEMS resonators through the collected material/experimental database and finite-element (FEM) simulation. By adapting an anchor-loss-free double-ended tuning fork (DETF) resonator design, the intrinsic material loss is expected to be the major loss mechanism in CMOS-MEMS resonators that limits the maximum Q-factor below 3,400 at the frequency of interest (300 kHz - 3 MHz). The highest Q-factor of 3,029 is measured in a 1.17-MHz DETF resonator, which is in good agreement with the theoretical prediction. Moreover, the increase of Q-factor at high temperature is also observed, which makes the proposed resonator very attractive for oven-controlled CMOS-MEMS oscillator applications.
Keywords :
CMOS integrated circuits; Q-factor; compensation; finite element analysis; microcavities; micromechanical resonators; vibrations; CMOS-MEMS resonators; FEM simulation; Q-factor limit; anchor-loss-free DETF resonator design; double-ended tuning fork; finite-element simulation; frequency 1.17 MHz; frequency 300 kHz to 3 MHz; intrinsic material loss; quality factor; temperature compensation; Frequency measurement; Materials; Micromechanical devices; Q-factor; Resonant frequency; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
Type :
conf
DOI :
10.1109/MEMSYS.2015.7051093
Filename :
7051093
Link To Document :
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