DocumentCode
1874656
Title
Low temperature fabrication of poly-Si FEA for display application
Author
Nagao, M. ; Sacho, Y. ; Kanemaru, S. ; Matsukawa, T. ; Itoh, J.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear
2004
fDate
11-16 July 2004
Firstpage
134
Lastpage
135
Abstract
A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.
Keywords
elemental semiconductors; field emitter arrays; hafnium compounds; low-temperature techniques; semiconductor growth; silicon; sputter deposition; sputtered coatings; Ar; HfC-coated poly-Si field emitter array; Si-HfC; display application; emission lifetime; emission reliability; glass substrates; low temperature Ar ion sputtering; tip sharpening; Argon; Coatings; Displays; Fabrication; Glass; Hybrid fiber coaxial cables; Oxidation; Plasma temperature; Sputter etching; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1354936
Filename
1354936
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