DocumentCode :
1874656
Title :
Low temperature fabrication of poly-Si FEA for display application
Author :
Nagao, M. ; Sacho, Y. ; Kanemaru, S. ; Matsukawa, T. ; Itoh, J.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
134
Lastpage :
135
Abstract :
A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.
Keywords :
elemental semiconductors; field emitter arrays; hafnium compounds; low-temperature techniques; semiconductor growth; silicon; sputter deposition; sputtered coatings; Ar; HfC-coated poly-Si field emitter array; Si-HfC; display application; emission lifetime; emission reliability; glass substrates; low temperature Ar ion sputtering; tip sharpening; Argon; Coatings; Displays; Fabrication; Glass; Hybrid fiber coaxial cables; Oxidation; Plasma temperature; Sputter etching; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354936
Filename :
1354936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1874656
بازگشت