During-growth quantitative metrology of epitaxial quantum dots by reflection high energy electron diffraction

Author

Freundlich, A. ; Rajapaksha, C. ; Gunasekera, M.

Author_Institution

Phys. Dept., Univ. of Houston, Houston, TX, USA

fYear

2011

fDate

19-24 June 2011

Abstract

Within the context of the archetype InAs/GaAs self assembled quantum dot system, we provide an in situ, methodology based on the analysis of reflection high energy electron diffraction (RHEED) patterns and demonstrate its ability for real time and simultaneous determination of the quantum dots facet orientations, average size (height), strain profile, and dot-density during the molecular beam and chemical beam epitaxy growth.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; self-assembly; semiconductor growth; semiconductor quantum dots; InAs-GaAs; RHEED pattern; chemical beam epitaxy growth; dot density; epitaxial quantum dot; growth quantitative metrology; molecular beam epitaxy growth; reflection high energy electron diffraction; self assembled quantum dot system; strain profile; Diffraction; Epitaxial growth; Gallium arsenide; Quantum dots; Real time systems; Shape; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186698

Filename

6186698